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參數(shù)資料
| 型號(hào)： | IS62WV25616ALL-70BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 115K |
| 代理商： | IS62WV25616ALL-70BI |
IS62WV25616ALL, IS62WV25616BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/05
9
WRITE CYCLE NO. 2
(
WE
Controlled:
OE
is HIGH During Write Cycle)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
OE
CS1
WE
LB
,
UB
DOUT
DIN
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CS1
and
WE
inputs and at
least one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CS1
) [ (
LB
) = (
UB
) ] (
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(
CS1
Controlled,
OE
= HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
WE
DOUT
DIN
LB
,
UB
t
PWB
相關(guān)PDF資料 |
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| IS62WV25616ALL-70T | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BLI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV25616ALL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 256Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616BLL-55BI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 256Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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