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參數(shù)資料
| 型號： | IS62WV25616ALL-70BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 115K |
| 代理商： | IS62WV25616ALL-70BI |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/05
IS62WV25616ALL, IS62WV25616BLL
ISSI
IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
70
25
30
10
10
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, f = 1 MH
Z
Com.
Ind.
Com.
Ind.
mA
I
CC
1
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
Com.
Ind.
0.35
0.35
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
15
15
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
,
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
55
40
45
15
15
Max.
70
35
40
15
15
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, f = 1 MH
Z
Com.
Ind.
Com.
Ind.
mA
I
CC
1
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
Com.
Ind.
0.35
0.35
0.35
0.35
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
15
15
15
15
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
,
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV25616ALL-70T | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BLI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV25616ALL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BI | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mb 256Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616BLL-55BI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mb 256Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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