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參數(shù)資料
| 型號(hào)： | IS42VS16160D-75BLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封裝： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件頁數(shù)： | 22/61頁 |
| 文件大?。?/td> | 939K |
| 代理商： | IS42VS16160D-75BLI |
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Integrated Silicon Solution, Inc. — www.issi.com
29
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
diagramforeachpossibleCASlatency;dataelementn +
3iseitherthelastofaburstoffourorthelastdesiredof
alongerburst.FollowingthePRECHARGEcommand,a
subsequentcommandtothesamebankcannotbeissued
until trpismet.Notethatpartoftherowprechargetimeis
hiddenduringtheaccessofthelastdataelement(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burstwithautoprecharge.ThedisadvantageofthePRE-
CHARGEcommandisthatitrequiresthatthecommand
and address buses be available at the appropriate time to
issuethecommand;theadvantageofthePRECHARGE
commandisthatitcanbeusedtotruncatefixed-length
or full-page bursts.
Full-pageREADburstscanbetruncatedwiththeBURST
TERMINATE command, and fixed-length READ bursts
maybetruncatedwithaBURSTTERMINATEcommand,
providedthatautoprechargewasnotactivated.TheBURST
TERMINATEcommandshouldbeissuedx cycles before
the clock edge at which the last desired data element is
valid, where x equalstheCASlatencyminusone.Thisis
shownintheREADBurstTerminationdiagramforeach
possibleCASlatency;dataelementn +3isthelastdesired
data element of a longer burst.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS45VS16160D-8BLA2 | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
| IS61C512-35J | x8 SRAM |
| IS61C512-35JI | x8 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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