參數(shù)資料
型號(hào): IS42S16128-12T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 256K X 16 SYNCHRONOUS DRAM, 12 ns, PDSO50
封裝: 0.400 INCH, TSOP2-50
文件頁數(shù): 27/75頁
文件大?。?/td> 638K
代理商: IS42S16128-12T
IS42S16128
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/13/00
27
A read command can be interrupted and a new write
command executed while the read cycle is in progress,
i.e., before that cycle completes. Data corresponding to
the new write command can be input at the point new write
command is executed. To prevent collision between
input and output data at the I/On pins during this opera-
tion, the
output data must be masked using the U/LDQM pins. The
interval (t
CCD
) between these commands must be at least
one clock cycle.
The selected bank must be set to the active state before
executing this command.
Interval Between Read and Write Commands
CAS
latency = 2, 3, burst length = 4
WRITE B0
READ A0
COMMAND
U/LDQM
I/O
CLK
D
IN
B0
D
IN
B2
D
IN
B1
D
IN
B3
t
CCD
HI-Z
READ (CA=A, BANK 0)
WRITE (CA=B, BANK 0)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16128-8T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16160A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S16160A-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S16160A-7T 制造商:Integrated Silicon Solution Inc 功能描述:
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