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| 型號： | IS42S16100C1-7TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 24/79頁 |
| 文件大?。?/td> | 755K |
| 代理商： | IS42S16100C1-7TLI |
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IS42S16100C1
ISSI
24
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/21/04
Burst Read
The read cycle is started by executing the read command.
The address provided during read command execution is
used as the starting address. First, the data corresponding
to this address is output in synchronization with the clock
signal after the
CAS
atency period. Next, data corresponding
to an address generated automatically by the device is
output in synchronization with the clock signal.
The output buffers go to the LOW impedance state
CAS
latency minus one cycle after the read command, and go
to the HIGH impedance state automatically after the last
data is output. However, the case where the burst length
is a full page is an exception. In this case the output
buffers must be set to the high impedance state by
executing a burst stop command.
Note that upper byte and lower byte output data can be
masked independently under control of the signals applied
to the U/LDQM pins. The delay period (t
QMD
) is fixed at two,
regardless of the
CAS
latency setting, when this function
is used.
The selected bank must be set to the active state before
executing this command.
CAS
latency = 3, burst length = 4
Burst Write
The write cycle is started by executing the command. The
address provided during write command execution is used
as the starting address, and at the same time, data for this
address is input in synchronization with the clock signal.
Next, data is input in other in synchronization with the clock
signal. During this operation, data is written to address
generated automatically by the device. This cycle
terminates automatically after a number of clock cycles
determined by the stipulated burst length. However, the
case where the burst length is a full page is an exception.
In this case the write cycle must be terminated by executing
a burst stop command. The latency for DQ pin data input
is zero, regardless of the
CAS
latency setting. However, a
wait period (write recovery: t
DPL
) after the last data input is
required for the device to complete the write operation.
Note that the upper byte and lower byte input data can be
masked independently under control of the signals applied
to the U/LDQM pins. The delay period (t
DMD
) is fixed at zero,
regardless of the
CAS
latency setting, when this function
is used.
The selected bank must be set to the active state before
executing this command.
CAS
latency = 2,3, burst length = 4
READ A0
COMMAND
UDQM
LDQM
DQ8-DQ15
DQ0-DQ 7
CLK
D
OUT
A0
t
QMD=2
HI-Z
HI-Z
HI-Z
READ (CA=A, BANK 0)
DATA MASK (LOWER BYTE)
DATA MASK (UPPER BYTE)
D
OUT
A2
D
OUT
A3
D
OUT
A1
D
OUT
A0
BURST LENGTH
WRITE
COMMAND
DQ
CLK
D
IN
0
D
IN
1
D
IN
2
D
IN
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16100 | 512K Words x 16 Bits x 2 Banks (16-MBIT)Synchronous DRAM(512K x 16 x 2組同步動(dòng)態(tài)RAM) |
| IS42S16128 | 128K Words x 16 Bits x 2 Banks (4-Mbit)Synchronous DRAM(128K x 16 x 2組同步動(dòng)態(tài)RAM) |
| IS42S16128-10T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-12T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | Chassis Mount and Din Rail Filters RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16100C1-7TLI-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16100C1-7TL-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16100C1-7T-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16100C-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16100C-7TL-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
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