參數(shù)資料
型號(hào)： IRLR024NPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 3/10頁
文件大?。?/td> 304K
代理商： IRLR024NPBF
IRLR/U024NPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 11A
Qrr
Reverse RecoveryCharge
–––
130
200
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
17
72
A
VDD = 25V, starting TJ = 25°C, L = 790H
RG = 25, IAS = 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width ≤ 300s; duty cycle ≤ 2%.
Uses IRLZ24N data and test conditions.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
ISD ≤ 11A, di/dt ≤ 290A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.061 –––
V/°C Reference to 25°C, ID = 1mA
–––
––– 0.065
VGS = 10V, ID = 10A
–––
––– 0.080
VGS = 5.0V, ID = 10A
–––
––– 0.110
VGS = 4.0V, ID = 9.0A
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
8.3
–––
S
VDS = 25V, ID = 11A
–––
25
A
VDS = 55V, VGS = 0V
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
15
ID = 11A
Qgs
Gate-to-Source Charge
–––
3.7
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.5
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
7.1
–––
VDD = 28V
tr
Rise Time
–––
74
–––
ns
ID = 11A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 12, VGS = 5.0V
tf
Fall Time
–––
29
–––
RD = 2.4, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
480
–––
VGS = 0V
Coss
Output Capacitance
–––
130
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
61
–––
= 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
InternalSourceInductance
–––
7.5
–––
RDS(on)
StaticDrain-to-SourceOn-Resistance
LD
InternalDrainInductance
4.5
IDSS
Drain-to-SourceLeakageCurrent
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR024NPBF 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 17A, D-PAK
IRLR024NTR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R
IRLR024NTRL 功能描述:MOSFET N-CH 55V 17A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLR024NTRLPBF 功能描述:MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR024NTRPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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