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參數(shù)資料
| 型號： | IRLU4343PBF |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 302K |
| 代理商： | IRLU4343PBF |
www.irf.com
1
12/8/04
Notes
through are on page 10
PD - 95394A
DIGITAL AUDIO MOSFET
IRLR4343PbF
IRLU4343PbF
IRLU4343-701PbF
I-Pak Leadform 701
IRLU4343-701
Refer to page 10 for package outline
D-Pak
IRLR4343
I-Pak
IRLU4343
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
Description
This Digital Audio HEXFET
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
S
D
G
VDS
55
V
RDS(ON) typ. @ VGS = 10V
42
m
:
RDS(ON) typ. @ VGS = 4.5V
57
m
:
Qg typ.
28
nC
TJ max
175
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Power Dissipation
W
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Clamping Pressure
h
N
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
g
–––
1.9
RθJA
Junction-to-Ambient (PCB Mounted)
gj
–––
50
°C/W
RθJA
Junction-to-Ambient (free air)
g
–––
110
-40 to + 175
–––
79
39
0.53
Max.
19
80
±20
55
26
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRLU7807Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLU7807ZCPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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| IRLU7807ZPBF | 功能描述:MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU7807ZPBF | 制造商:International Rectifier 功能描述:MOSFET |
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