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參數(shù)資料
| 型號： | IRLU4343PBF |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRLU4343PBF |
6
www.irf.com
IRLR/U4343PbF & IRLU4343-701PbF
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
GS
Pulse Width < 1s
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
Fig 17b. Unclamped Inductive Waveforms
Fig 17a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
-
VDD
DRIVER
A
15V
20V
VGS
Fig 19a. Gate Charge Test Circuit
Fig 19b Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Inductor
Current
1K
VCC
DUT
0
L
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRLU7807Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLU7807ZCPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLU7807ZHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 43A 3PIN IPAK - Bulk |
| IRLU7807ZPBF | 功能描述:MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU7807ZPBF | 制造商:International Rectifier 功能描述:MOSFET |
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