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參數(shù)資料
| 型號： | IRLU4343PBF |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRLU4343PBF |
www.irf.com
3
IRLR/U4343PbF & IRLU4343-701PbF
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
≤ 60s PULSE WIDTH
Tj = 25°C
2.3V
VGS
TOP
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
BOTTOM
2.3V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
≤ 60s PULSE WIDTH
Tj = 175°C
2.3V
VGS
TOP
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
BOTTOM
2.3V
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(o
n
)
,
D
ra
in
-t
o
-S
o
u
rc
e
O
n
R
e
s
is
ta
n
c
e
(N
o
rm
a
liz
e
d
)
ID = 19A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
it
a
n
c
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10203040
QG Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
te
-t
o
-S
o
u
rc
e
V
o
lt
a
g
e
(V
)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 19A
FOR TEST CIRCUIT
SEE FIGURE 19
0
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(Α
)
VDS = 30V
≤ 60s PULSE WIDTH
TJ = 25°C
TJ = 175°C
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