參數(shù)資料
型號(hào)： IRLR024NPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 304K
代理商： IRLR024NPBF
HEXFET Power MOSFET
S
D
G
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Case-to-Ambient (PCB mount)**
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
VDSS = 55V
RDS(on) = 0.065
ID = 17A
Description
12/6/04
www.irf.com
1
l Logic-Level Gate Drive
l Surface Mount (IRLR024N)
l Straight Lead (IRLU024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
A
IDM
Pulsed Drain Current
72
PD @TC = 25°C
Power Dissipation
45
W
Linear Derating Factor
0.3
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
68
mJ
IAR
Avalanche Current
11
A
EAR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 95081A
IRLR024NPbF
IRLU024NPbF
D-Pak
I-Pak
IRLR024NPbF IRLU024NPbF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR024NPBF 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 17A, D-PAK
IRLR024NTR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R
IRLR024NTRL 功能描述:MOSFET N-CH 55V 17A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLR024NTRLPBF 功能描述:MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR024NTRPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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