參數(shù)資料
型號(hào)： IRL2505PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 219K
代理商： IRL2505PBF
IRL2505PbF
2
www.irf.com
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
0.035
V/°C Reference to 25°C, ID = 1mA
0.008
VGS = 10V, ID = 54A
0.010
VGS = 5.0V, ID = 54A
0.013
VGS = 4.0V, ID = 45A
VGS(th)
Gate Threshold Voltage
1.0
2.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
59
S
VDS = 25V, ID = 54A
25
VDS = 55V, VGS = 0V
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
-100
VGS = -16V
Qg
Total Gate Charge
130
ID = 54A
Qgs
Gate-to-Source Charge
25
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
67
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
12
VDD = 28V
tr
Rise Time
160
ID = 54A
td(off)
Turn-Off Delay Time
43
RG = 1.3, VGS = 5.0V
tf
Fall Time
84
RD = 0.50, See Fig. 10
Between lead,
and center of die contact
Ciss
Input Capacitance
5000
VGS = 0V
Coss
Output Capacitance
1100
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
390
= 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
RDS(on)
Static Drain-to-Source On-Resistance
LS
Internal Source Inductance
7.5
ns
IDSS
Drain-to-Source Leakage Current
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
1.3
V
TJ = 25°C, IS = 54A, VGS = 0V
trr
Reverse Recovery Time
140 210
ns
TJ = 25°C, IF = 54A
Qrr
Reverse Recovery Charge
650 970
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
104
360
Pulse width ≤ 300s; duty cycle ≤ 2%.
Notes:
ISD ≤ 54A, di/dt ≤ 230A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 240H
RG = 25, IAS = 54A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IGSS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRL2505S 功能描述:MOSFET N-CH 55V 104A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL2505S/L 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET
IRL2505SPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 8mOhms 86.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL2505STRL 功能描述:MOSFET N-CH 55V 104A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL2505STRLPBF 功能描述:MOSFET MOSFT 55V 104A 8mOhm 86.7nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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