參數(shù)資料
型號： IRGPS40B120UD
英文描述： TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 40A I(C) | TO-247VAR
中文描述： 晶體管| IGBT的|正陳| 1.2KV五（巴西）國際消費(fèi)電子展| 40A條一（c）|至247VAR
文件頁數(shù)： 2/12頁
文件大?。?/td> 117K
代理商： IRGPS40B120UD
IRGPS40B120UD
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Ref.Fig.
5, 6
7, 9
10
11
9,10
11 ,12
Min. Typ. Max. Units
1200
–––
–––
0.40
–––
3.12
–––
3.39
–––
3.88
–––
4.24
4.0
5.0
-12
–––
30.5
–––
–––
–––
420 1200
–––
2.03
–––
2.17
–––
2.26
–––
2.46
–––
–––
±100
Conditions
–––
–––
3.40
3.70
4.30
4.70
6.0
–––
mV/
°
C
–––
500
V
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25
°
C-125
°
C)
I
C
= 40A
I
C
= 50A
I
C
= 40A, T
J
= 125
°
C
I
C
= 50A, T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25
°
C-125
°
C)
V
CE
= 50V, I
C
= 40A, PW=80μs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125
°
C
I
C
= 40A
I
C
= 50A
I
C
= 40A, T
J
= 125
°
C
I
C
= 50A, T
J
= 125
°
C
V
GE
= ±20V
V/
°
C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
–––
Forward Transconductance
Zero Gate Voltage Collector Current
S
μA
V
FM
Diode Forward Voltage Drop
2.40
2.60
2.68
2.95
V
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Gate-to-Emitter Leakage Current
nA
8
Ref.Fig.
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
340
–––
40
–––
165
–––
1400 1750
–––
1650 2050
–––
3050 3800
–––
1950 2300
–––
2200 2950
–––
4150 5250
–––
76
–––
39
–––
332
–––
25
–––
4300
–––
–––
330
–––
160
Conditions
510
60
248
I
C
= 40A
V
CC
= 600V
V
GE
= 15V
I
C
= 40A, V
CC
= 600V
V
GE
= 15V,R
G
= 4.7
,
L =200μH
Ls = 150nH
nC
μJ
T
J
= 25
°
C
T
J
= 125
°
C
μJ
Energy losses include "tail" and
diode reverse recovery.
I
C
= 40A, V
CC
= 600V
V
GE
= 15V, R
G
= 4.7
L =200μH
Ls = 150nH, T
J
= 125
°
C
99
55
365
33
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150
°
C, I
C
= 160A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7
T
J
= 150
°
C, Vp =1200V
V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7
T
J
= 125
°
C
V
CC
= 600V, I
F
= 60A, L =200μH
V
GE
= 15V,R
G
= 4.7
,
Ls = 150nH
–––
–––
pF
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
–––
3346
–––
–––
180
–––
50
μJ
ns
A
–––
–––
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
μs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGPS40B120UDP 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGPS40B120UP 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRGPS40B120UPBF 功能描述:IGBT 晶體管 1200V UltraFast 8-25kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGPS60B120KD 制造商:International Rectifier 功能描述:
IRGPS60B120KDP 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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