參數(shù)資料
型號： IRGIB15B60KD1
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/12頁
文件大?。?/td> 287K
代理商： IRGIB15B60KD1
IRGIB15B60KD1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
2
www.irf.com
Vcc =80% (V
CES
), V
GE
= 20V, L =100μH, R
G
= 22
.
Energy losses include "tail" and diode reverse recovery.
Min.
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.32
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
1.80
2.20
I
C
= 15A, V
GE
= 15V, T
J
= 25°C
2.05
2.50
V
I
C
= 15A, V
GE
= 15V, T
J
= 150°C
2.10
2.60
I
C
= 15A, V
GE
= 15V, T
J
= 175°C
4.5
5.5
V
V
CE
= V
GE
, I
C
= 250μA
-10
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
10
—
S
V
CE
= 50V, I
C
= 15A, PW = 80μs
1.0
150
V
GE
= 0V, V
CE
= 600V
163
500
μA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
829
1800
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
1.69
2.30
V
I
F
= 15A, V
GE
= 0V
1.31
1.75
I
F
= 15A, V
GE
= 0V, T
J
= 150°C
1.25
1.65
I
F
= 15A, V
GE
= 0V, T
J
= 175°C
—
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig.
V
GE
= 0V, I
C
= 500μA
5,6,7
V
CE(on)
Collector-to-Emitter Voltage
9,10,11
V
GE(th)
V
GE(th)
/
T
J
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
9,10,11
12
I
CES
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
8
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
56
84
7.0
10
26
39
127
140
334
422
461
556
30
39
25
35
173
188
41
53
258
282
570
646
829
915
30
39
25
35
194
207
56
73
7.5
—
850
1275
100
150
32
48
Conditions
Ref.Fig.
I
C
= 15A
V
CC
= 400V
V
GE
= 15V
I
C
= 15A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 22
, L = 1.07mH
Ls= 150nH, T
J
= 25°C
I
C
= 15A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 22
, L = 1.07mH
Ls= 150nH, T
J
= 25°C
23
nC
CT1
CT4
CT4
I
C
= 15A, V
CC
= 400V
V
GE
= 15V, R
G
= 22
, L = 1.07mH
Ls= 150nH, T
J
= 150°C
I
C
= 15A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 22
, L = 1.07mH
Ls= 150nH, T
J
= 150°C
CT4
μJ
13,15
WF1,WF2
14,16
CT4
WF1
WF2
nH
Measured 5 mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 38A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 22
T
J
= 150°C, Vp = 600V, R
G
= 22
V
CC
=360V,V
GE
= +15V to 0V
pF
22
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
CT3
WF4
I
SC (PEAK)
E
rec
t
rr
I
rr
Q
rr
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
—
—
—
—
—
140
267
67
23
984
—
347
87
30
1279
A
μJ
ns
A
nC
WF4
T
J
= 150°C
V
CC
= 400V, I
F
= 15A, L = 1.07mH
V
GE
= 15V, R
G
= 22
di/dt = 875A/μs
17,18,19
20,21
CT4,WF3
相關(guān)PDF資料
PDF描述
IRGIB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGKIN050M12 CHOPPER LOW SIDE SWITCH IGBT INTAPAK
IRGMH40F Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
IRGP20B120UD-EP insulated gate bipolar transistor with ultrafast soft recovery didoe
IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGIB15B60KD1P 功能描述:IGBT 晶體管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGIB6B60KD 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB6B60KD116P 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGIB6B60KDPBF 功能描述:IGBT 晶體管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGIB7B60KD 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*