- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377519 > IRGMH40F (International Rectifier) Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) PDF資料下載
參數(shù)資料
| 型號： | IRGMH40F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 149K |
| 代理商： | IRGMH40F |
Parameter
Max.
1200
13
48
24
± 20
48
96
38
Units
V
V
CES
I
C
@ T
C
= 100°C
I
CM
I
C
@ T
C
= 25°C
V
GE
I
LM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Continuous Collector Current
Gate-to-Emitter Voltage
Clamped Inductive Load Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature, for 10 seconds
Weight
A
V
A
W
-55 to + 150
300 (1.6mm from case )
9.3 (typical)
°C
g
IRGMH40F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
Eletrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz
～ 8
kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
PD 9.1418
E
C
G
n-channel
The performance of various IGBTs varies greatly with frequency. Note that
IR now provides the designer with a speed benchmark (f
Ic/2
, or the "haft-
current frequency "), as well as an indication of the current handling
capability of the device.
4/25/96
Parameter
Typ.
–––
0.21
–––
Max.
1.3
–––
48
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
°C/W
Thermal Resistance
Absolute Maximum Ratings
V
CES
= 1200V
V
CE(sat)
≤
3.6V
@V
GE
= 15V, I
C
= 13A
TO-254AA
PRELIMINARY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGP20B120UD-EP | insulated gate bipolar transistor with ultrafast soft recovery didoe |
| IRGP30B120KD-EP | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT |
| IRGP4055DPBF | PDP TRENCH IGBT |
| IRGP4063DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGP430UD2 | 320 x 240 pixel format, LED or CFL Backlight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGMIC50U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultra Fast Speed IGBT |
| IRGMIC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMIC50UU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-259VAR |
| IRGMVC50U | 制造商:International Rectifier 功能描述: |
| IRGMVC50UD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。