參數(shù)資料
型號(hào)： IRGP4055DPBF
廠商： International Rectifier
英文描述： PDP TRENCH IGBT
中文描述： 等離子溝道IGBT
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 274K
代理商： IRGP4055DPBF
www.irf.com
1
06/14/06
IRGP4055DPbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
V
CE
min
V
CE(ON)
typ. @ 110A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.70
270
150
V
V
A
°C
Key Parameters
G
C
E
Gate
Collector
Emitter
GC
E
TO-247AC
C
E
G
n-channel
C
Absolute Maximum Ratings
Parameter
Units
V
A
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
1.45
0.20
–––
Max.
0.48
2.5
–––
70
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
2.0 (0.07)
g (oz)
270
255
102
2.04
300
-40 to + 150
10lb in (1.1N m)
Max.
±30
60
110
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