參數(shù)資料
型號: IRGP440U
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
文件頁數(shù): 1/7頁
文件大?。?/td> 108K
代理商: IRGP440U
IRGP440U
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
0.24
------
6 (0.21)
Max.
0.77
------
40
------
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Features
Switching-loss rating includes all "tail" losses
Optimized for high operating frequency (over
5kHz)
See Fig. 1 for Current vs. Frequency
curve
V
CES
= 500V
V
CE(sat)
3.0V
@V
GE
= 15V, I
C
= 22A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
500
40
22
80
80
±20
15
160
65
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
T
O-247AC
PD - 9.779
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