- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377519 > IRGB5B120KDPBF (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PDF資料下載
參數(shù)資料
| 型號： | IRGB5B120KDPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 287K |
| 代理商： | IRGB5B120KDPBF |
IRGB5B120KDPbF
2
www.irf.com
Note:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100μH, R
G
= 50
.
Energy losses include "tail" and diode reverse recovery.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Qgc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
Min. Typ. Max. Units
1200 –––
–––
1.15
–––
2.75
–––
3.36
4.0
5.0
-11
–––
2.6
–––
–––
–––
66
–––
2.13 2.45
–––
2.38 2.75
–––
––– ±100
Conditions
–––
–––
3.0
3.7
6.0
––– mV/°C
–––
100
200
V
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
I
C
= 6.0A V
GE
= 15V
I
C
= 6.0A V
GE
= 15V T
J
= 125°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
V
CE
= 50V, I
C
= 6.0A, PW=80μs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
I
F
= 6.0A
I
F
= 6.0A T
J
= 125°C
V
GE
= ±20V
V/°C
V
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
S
μA
V
FM
Diode Forward Voltage Drop
V
nA
I
GES
Gate-to-Emitter Leakage Current
8
Min. Typ. Max. Units
–––
25
–––
3.7
–––
13
–––
390
–––
330
–––
720
–––
22
–––
19
–––
100
–––
19
–––
440
–––
370
–––
810 1220
–––
21
–––
18
–––
110
–––
22
–––
370
–––
33
–––
11
Conditions
I
C
= 6.0A
V
CC
= 800V
V
GE
= 15V
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V,R
G
= 50
,
L =3.7mH
Ls = 150nH
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V, R
G
= 50
L =3.7mH
Ls = 150nH, T
J
= 25°C
38
5.6
20
440
440
880
29
27
120
25
660
560
nC
μJ
T
J
= 25°C
ns
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V,R
G
= 50
,
L =3.7mH
Ls = 150nH
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V, R
G
= 50
L =3.7mH
Ls = 150nH, T
J
= 125°C
μJ
T
J
= 125°C
27
25
150
29
–––
–––
–––
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 24A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V,
T
J
= 150°C, Vp =1200V, R
G
= 50
V
CC
= 900V, V
GE
= +15V to 0V
T
J
= 125°C
V
CC
= 600V, I
F
= 6.0A, L = 2.0mH
V
GE
= 15V,R
G
= 50
,
Ls = 150nH
pF
μs
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current –––
–––
–––
360
160
9.0
–––
–––
–––
μJ
ns
A
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
Ref.Fig.
23
CT1
CT4
CT4
13,15
WF1WF2
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
CT4
R
G
=50
14, 16
CT4
WF1
WF2
22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGB6B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGB8B60KPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGB8B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS8B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL8B60K | INSULATED GATE BIPOLAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGB6B60K | 制造商:International Rectifier 功能描述:IGBT TO-220AB |
| IRGB6B60KD | 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 13A, Transistor Type:IGBT, DC Collector Current:13A, Collecto |
| IRGB6B60KDPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB6B60KPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB8B60K | 制造商:International Rectifier 功能描述:IGBT TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復。