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參數(shù)資料
| 型號： | IRG4MC40U |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IRG4MC40U |
4
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IRG4MC40U
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4
- Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (
°
C)
1.0
2.0
3.0
V
IC = 40A
VGE = 15V
80μs PULSE WIDTH
IC = 20A
IC = 10A
25
50
75
100
125
150
TJ , Junction Temperature (
°
C )
0
10
20
30
40
50
)
VGE = 15V
LIMITED BY PACKAGE
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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