參數(shù)資料
型號： IRG4MC40U
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁數(shù)： 2/8頁
文件大?。?/td> 151K
代理商： IRG4MC40U
2
www.irf.com
IRG4MC40U
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
ts
t
d(on)
t
r
t
d(off)
t
r
E
ts
L
C
+L
E
150
25
60
50
42
190
120
1.0
40
40
300
250
1.8
–––
I
C
= 20A
V
CC
= 300V
V
GE
= 15V
T
J
= 25°C
I
C
= 20A, V
CC
= 480V
V
GE
= 15V, R
G
= 9.1
Energy losses include "tail"
See Fig. 10, 11, 13, 14
T
J
= 125°C,
I
C
= 20A, V
CC
= 480V
V
GE
= 15V, R
G
= 9.1
Energy losses include "tail"
See Fig. 13, 14
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
nC
See Fig. 8
mJ
ns
mJ
nH
C
ies
C
oes
C
res
Notes:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2215 –––
–––
135
–––
25
–––
–––
pF
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
–––
17
–––
–––
0.5
–––
–––
–––
–––
–––
–––
3.0
–––
–––
-12
11
–––
–––
–––
–––
–––
–––
–––
Conditions
V
(BR)CES
V
(BR)ECS
–––
–––
–––
2.1
2.5
2.0
6.0
–––
–––
50
2000
±100
V
V
V
GE
= 0V, I
C
= 1.0 mA
V
GE
= 0V, I
C
= 1.0 A
V
GE
= 0V, I
C
= 1.0 mA
I
C
= 20A V
GE
= 15V
I
C
= 35A
I
C
= 20A , T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 1.0 mA
mV/
°
C V
CE
= V
GE
, I
C
= 250 μA
S
V
CE
≥
15V, I
C
= 20A
V
GE
= 0V, V
CE
= 480V
V
GE
= 0V, V
CE
= 480V, T
J
= 125
°
C
nA
V
GE
= ±20V
V/
°
C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
V
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L =
100μH, R
G
= 9.1
,
(See fig. 13a)
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