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參數(shù)資料
| 型號： | IRG4MC40U |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IRG4MC40U |
www.irf.com
3
IRG4MC40U
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
V , Collector-to-Emitter Voltage (V)
I
C
V = 15V
20μs PULSE WIDTH
T = 25 C
T = 150 C
°
1
10
100
1000
4
6
8
10
12
V , Gate-to-Emitter Voltage (V)
I
C
V = 50V
5μs PULSE WIDTH
T = 25 C
T = 150 C
0.1
1
10
100
f , Frequency ( kHz )
0
10
20
30
40
50
60
L
For both:
Duty cycle : 50%
Tj = 125
°
C
Tsink = 90
°
C
Gate drive as specified
Power Dissipation = 29W
Triangular wave:
Clamp voltage:
80% of rated
60% of rated
voltage
Ideal diodes
Square wave:
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