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參數(shù)資料
| 型號： | IRG4P254S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISOR |
| 中文描述： | 絕緣柵雙極型TRANSISOR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | IRG4P254S |
Parameter
Max.
250
98*
55
196
196
± 20
160
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
°C
IRG4P254S
Parameter
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
*
Package limited to 70A
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°
C/W
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
TO-247AC
Features
Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristors
Benefits
V
CES
= 250V
V
CE(on) typ.
=
1.32V
@V
GE
= 15V, I
C
= 55A
4/15/2000
Standard Speed IGBT
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4P254SD | 制造商:International Rectifier 功能描述:250V 70.000A COPAK 247 / IGBT : JA / DIS |
| IRG4P254SPBF | 功能描述:IGBT 晶體管 250V DC-1kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PC20FD | 制造商:International Rectifier 功能描述:600V 16.000A COPAK 247 / IGBT : JA / DIS |
| IRG4PC20KD | 制造商:International Rectifier 功能描述:600V 10.000A COPAK 247 / IGBT : JA / DIS |
| IRG4PC20SD | 制造商:International Rectifier 功能描述:600V 19.000A COPAK 247 / IGBT : JA / DIS |
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