參數資料
型號： IRG4IBC30UDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復二極管
文件頁數： 2/11頁
文件大小： 325K
代理商： IRG4IBC30UDPBF
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
–––
50
–––
8.1
–––
18
–––
40
–––
21
–––
91
–––
80
–––
0.38
–––
0.16
–––
0.54
–––
40
–––
22
–––
120
–––
180
–––
0.89
–––
7.5
––– 1100 –––
–––
73
–––
14
–––
42
–––
80
–––
3.5
–––
5.6
–––
80
–––
220
–––
180
–––
120
Conditions
75
12
27
–––
–––
140
130
–––
–––
0.9
–––
–––
–––
–––
–––
–––
I
C
= 12A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 12A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
–––
–––
60
120
6.0
10
180
600
–––
–––
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
–––
–––
0.63
–––
1.95
–––
2.52
–––
2.09
3.0
–––
-11
3.1
8.6
–––
–––
–––
––– 2500
–––
1.4
–––
1.3
–––
––– ±100
Conditions
–––
–––
2.1
–––
–––
6.0
––– mV/°C V
CE
= V
GE
, I
C
= 250μA
–––
S
V
CE
= 100V, I
C
= 12A
250
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 12A
1.6
I
C
= 12A, T
J
= 150°C
nA
V
GE
= ±20V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 12A
I
C
= 23A
I
C
= 12A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage –––
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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