參數(shù)資料
型號(hào)： IRG4IBC30UDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 1/11頁
文件大小： 325K
代理商： IRG4IBC30UDPBF
IRG4IBC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
Tighter parameter distribution
Industry standard Isolated TO-220 Fullpak
TM
outline
Lead-Free
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.95V
@V
GE
= 15V, I
C
= 12A
UltraFast CoPack IGBT
7/27/04
PD- 95598
Parameter
Typ.
–––
–––
–––
2.0 (0.07)
Max.
2.8
4.1
65
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
TO-220 FULLPAK
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
17
8.9
92
92
8.5
92
2500
± 20
45
18
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
Visol
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
Simplified assembly
Highest efficiency and power density
HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRG4MC30FSCX 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk
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