參數(shù)資料
型號(hào)： IRG4BC40U
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.72V，@和VGE \u003d 15V的，集成電路\u003d 20A條）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 169K
代理商： IRG4BC40U
2
www.irf.com
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10
,
(see fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
----
100
----
16
----
40
----
34
----
19
----
110
----
120
----
0.32
----
0.35
----
0.67
----
30
----
19
----
220
----
160
----
1.4
----
7.5
----
2100
----
140
----
34
Conditions
I
C
= 20A
V
CC
= 400V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 20A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
150
25
60
----
----
175
180
----
----
1.0
----
----
----
----
----
----
----
----
----
nC
See Fig. 8
ns
mJ
See Fig. 10, 11, 13, 14
T
J
= 150
°
C,
I
C
= 20A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage ----
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
----
18
----
0.63
----
1.72
----
2.15
----
1.7
3.0
----
-13
11
18
----
----
----
----
----
----
----
----
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 20A
I
C
= 40A
I
C
= 20A, T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
----
----
----
2.1
----
----
6.0
---- mV/
°
C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 20A
250
V
GE
= 0V, V
CE
= 600V
2.0
μA
V
GE
= 0V, V
CE
= 10V, T
J
= 25
°
C
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
±100
nA
V
GE
= ±20V
V
V
V/
°
C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
Gate Threshold Voltage
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
See Fig. 2, 5
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