參數(shù)資料
型號： IRG4BC40U
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.72V，@和VGE \u003d 15V的，集成電路\u003d 20A條）
文件頁數(shù)： 1/8頁
文件大?。?/td> 169K
代理商： IRG4BC40U
E
C
G
n-channel
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
0.50
------
2 (0.07)
Max.
0.77
------
80
------
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°
C/W
g (oz)
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
40
20
160
160
±20
15
160
65
Units
V
V
CES
I
C
@ T
C
= 25
°
C
I
C
@ T
C
= 100
°
C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25
°
C
P
D
@ T
C
= 100
°
C
T
J
T
STG
A
V
mJ
-55 to +150
°
C
300 (0.063 in. (1.6mm) from case)
10 lbf
in (1.1N
m)
Thermal Resistance
V
CES
= 600V
V
CE(on) typ.
=
1.72V
@V
GE
= 15V, I
C
= 20A
4/17/2000
W
TO-220AB
www.irf.com
1
相關(guān)PDF資料
PDF描述
IRG4BH20K-LPBF INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A )
IRG4IBC10UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT
IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20UDPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.4 to 5.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
IRG4IBC30KDPBF Replacement for Texas Instruments part number SN74LS151N. Buy from authorized manufacturer Rochester Electronics.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BC40UD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4BC40UPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC40W 功能描述:IGBT WARP 600V 40A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4BC40WHR 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB
IRG4BC40WL 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
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