參數(shù)資料
型號： IRG4BC30UDPBF
廠商： International Rectifier
英文描述： General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管超快速IGBT的CoPack
文件頁數(shù)： 2/11頁
文件大小： 282K
代理商： IRG4BC30UDPBF
IRG4BC30UDPbF
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
----
50
----
8.1
----
18
----
40
----
21
----
91
----
80
----
0.38
----
0.16
----
0.54
----
40
----
22
----
120
----
180
----
0.89
----
7.5
----
1100
----
73
----
14
----
42
----
80
----
3.5
----
5.6
----
80
----
220
----
180
----
120
Conditions
I
C
= 12A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
75
12
27
----
----
140
130
----
----
0.9
----
----
----
----
----
----
----
----
----
60
120
6.0
10
180
600
----
----
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 12A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage ----
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
----
0.63
----
1.95
----
2.52
----
2.09
3.0
----
-11
3.1
8.6
----
----
----
----
2500
----
1.4
----
1.3
----
----
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 12A
I
C
= 23A
I
C
= 12A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
----
----
2.1
----
----
6.0
---- mV/°C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 12A
250
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 12A
1.6
I
C
= 12A, T
J
= 150°C
nA
V
GE
= ±20V
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BC30UD-S 制造商:International Rectifier 功能描述:600V 23.000A COPAK D2PAK / IGBT : JA / D
IRG4BC30UPBF 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC30US 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)
IRG4BC30U-S 功能描述:IGBT UFAST 600V 23A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4BC30U-SPBF 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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