參數(shù)資料
型號： IRG4BC30U-S
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)
中文描述： 絕緣柵雙極晶體管IGBT的速度超快速（VCES和\u003d 600V電壓的Vce（on）的典型。\u003d 1.95V，@和VGE \u003d 15V的，集成電路\u003d 12A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 161K
代理商： IRG4BC30U-S
IRG4BC30K-S
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
67
—
11
—
25
—
26
—
28
—
130
—
120
—
0.36
—
0.51
—
0.87
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
100
16
37
—
—
200
170
—
—
1.3
—
I
C
= 16A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25
°
C
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 9,10,14
mJ
μs
V
CC
= 400V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 23
, V
CPK
< 500V
T
J
= 150
°
C,
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 11,14
T
J
= 25
°
C
,
V
GE
= 15V, R
G
= 23
I
C
= 14A, V
CC
= 480V
Energy losses include "tail"
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
25
29
190
190
1.2
0.26
0.36
0.62
7.5
920
110
27
—
—
—
—
—
—
—
—
—
—
—
—
mJ
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.54
—
2.21
—
2.21
—
2.88
—
2.36
3.0
—
—
-12
5.4
8.1
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
—
2.7
—
—
6.0
—
—
250
2.0
1100
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 14A
I
C
= 16A V
GE
= 15V
I
C
= 28A
I
C
= 16A , T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100V, I
C
= 16A
V
GE
= 0V, V
CE
= 600V
μA
V
GE
= 0V, V
CE
= 10V, T
J
= 25
°
C
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note
through
are on the last page
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
相關(guān)PDF資料
PDF描述
IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BC30U-SPBF 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC30U-STRL 制造商:International Rectifier 功能描述:600V 23.000A D2PAK / IGBT : JA / DISCRET
IRG4BC30U-STRRP 功能描述:IGBT 模塊 600V 23AD2PAK RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
IRG4BC30W 功能描述:IGBT WARP 600V 23A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4BC30W_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
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