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參數(shù)資料
| 型號： | IRG4BC30UD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.95V，@和VGE \u003d 15V的，集成電路\u003d 12A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 161K |
| 代理商： | IRG4BC30UD |
4/24/2000
V
CES
= 600V
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 16A
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
28
16
58
58
10
±20
260
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Short Circuit Rated
UltraFast IGBT
Parameter
Typ.
–––
0.5
–––
1.44
Max.
1.2
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)
Weight
°
C/W
g
Thermal Resistance
E
C
G
n-channel
D Pak
Features
High short circuit rating optimized for motor control,
t
sc
=10μs, @360V V
CE
(start), T
J
= 125
°
C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGBC30K-S and
IRGBC30M-S devices
Benefits
www.irf.com
1
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