參數(shù)資料
型號(hào): IRFSL4610PbF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 7/11頁
文件大?。?/td> 427K
代理商: IRFSL4610PBF
www.irf.com
7
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
GS
Pulse Width < 1μs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
Fig 24a.
Gate Charge Test Circuit
Fig 24b.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 21.
!
for N-Channel
HEXFET Power MOSFETs
1K
VCC
DUT
0
L
P.W.
Period
di/dt
Diodedv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
"
"
+
-
+
+
+
-
-
-
!"#""
"#""&#
$%%
相關(guān)PDF資料
PDF描述
IRFS52N15DPBF HEXFET Power MOSFET
IRFSL52N15DPBF HEXFET Power MOSFET
IRFS59N10DPbF HEXFET Power MOSFET
IRFSL59N10DPbF HEXFET Power MOSFET
IRFSL11N50APBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFSL4615PBF 功能描述:MOSFET MOSFT 150V 33A 42mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4615PBF 制造商:International Rectifier 功能描述:MOSFET 150V 33A 42 mOhm 26 nC Qg TO 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 150V, 33A, TO-262
IRFSL4620PBF 功能描述:MOSFET MOSFT 200V 24A 78mOhm 25nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4620PBF 制造商:International Rectifier 功能描述:MOSFET 200V 24A 78 mOhm 25 nC Qg TO
IRFSL4710 制造商:International Rectifier 功能描述:Single N-Channel 100 V 3.8 W 110 nC Hexfet Power Mosfet Through Hole - TO-262-3