參數(shù)資料
型號： IRFSL4610PbF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/11頁
文件大小： 427K
代理商： IRFSL4610PBF
2
www.irf.com
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.39mH
R
G
= 25
, I
AS
= 44A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
44A, di/dt
≤
660A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
θ
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
100
–––
–––
0.085
–––
11
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.5
–––
–––
14
4.0
20
250
200
-200
–––
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related) –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
nA
R
G
f = 1MHz, open drain
Min. Typ. Max. Units
73
–––
–––
90
–––
20
–––
36
–––
18
–––
87
–––
53
–––
70
–––
3550
–––
260
–––
150
330
–––
380
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
73
A
I
SM
–––
–––
290
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
35
42
44
65
2.1
1.3
53
63
66
98
–––
V
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 85V,
I
F
= 44A
di/dt = 100A/μs
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
I
D
= 44A
R
G
= 5.6
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 80V , See Fig. 5
V
GS
= 10V
V
DD
= 65V
T
J
= 25°C, I
S
= 44A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 44A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 80V
Conditions
Conditions
V
DS
= 50V, I
D
= 44A
I
D
= 44A
相關(guān)PDF資料
PDF描述
IRFS52N15DPBF HEXFET Power MOSFET
IRFSL52N15DPBF HEXFET Power MOSFET
IRFS59N10DPbF HEXFET Power MOSFET
IRFSL59N10DPbF HEXFET Power MOSFET
IRFSL11N50APBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFSL4615PBF 功能描述:MOSFET MOSFT 150V 33A 42mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4615PBF 制造商:International Rectifier 功能描述:MOSFET 150V 33A 42 mOhm 26 nC Qg TO 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 150V, 33A, TO-262
IRFSL4620PBF 功能描述:MOSFET MOSFT 200V 24A 78mOhm 25nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4620PBF 制造商:International Rectifier 功能描述:MOSFET 200V 24A 78 mOhm 25 nC Qg TO
IRFSL4710 制造商:International Rectifier 功能描述:Single N-Channel 100 V 3.8 W 110 nC Hexfet Power Mosfet Through Hole - TO-262-3
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*