參數(shù)資料
型號: IRFP4232PBF
廠商: International Rectifier
英文描述: PDP MOSFET
中文描述: MOSFET的等離子
文件頁數(shù): 5/8頁
文件大小: 293K
代理商: IRFP4232PBF
www.irf.com
5
Fig 17.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15.
Threshold Voltage vs. Temperature
Fig 14.
Maximum Avalanche Energy Vs. Temperature
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 16.
Typical Repetitive peak Current vs.
Case temperature
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
0
100
200
300
400
500
600
RD
)
TJ = 25°C
TJ = 125°C
ID = 42A
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
EA
ID
TOP
12A
18A
BOTTOM
42A
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VG
ID = 250μA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i
/
Ri
Ci=
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τ
i (sec)
0.0091 0.000003
0.0487 0.000071
0.1264 0.001743
0.1660 0.024564
25
50
75
100
125
150
175
Case Temperature (°C)
0
40
80
120
160
200
R
ton= 1μs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
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