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參數(shù)資料
| 型號： | IRFP4232PBF |
| 廠商： | International Rectifier |
| 英文描述： | PDP MOSFET |
| 中文描述： | MOSFET的等離子 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 293K |
| 代理商： | IRFP4232PBF |
www.irf.com
1
04/21/05
IRFP4232PbF
Notes
through are on page 8
Description
HEXFET
Power MOSFET
MOSFET
!
()**
)
"
MOSFET
#$%&'
MOSFET
+**
Features
Advanced process technology
Key parameters optimized for PDP Sustain &
Energy Recovery applications
Low E
PULSE
rating to reduce the power
dissipation in Sustain & ER applications
Low Q
G
for fast response
High repetitive peak current capability for
reliable operation
Short fall & rise times for fast switching
175°C operating junction temperature for
improved ruggedness
Repetitive avalanche capability for robustness
and reliability
S
D
G
TO-247AC
Absolute Maximum Ratings
Parameter
Units
V
V
GS
V
GS
(TRANSIENT)
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
Repetitive Peak Current
Power Dissipation
W
Power Dissipation
Linear Derating Factor
W/°C
T
J
T
STG
Operating Junction and
°C
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
N
Thermal Resistance
Parameter
Typ.
–––
Max.
0.35
Units
°C/W
R
θ
JC
Junction-to-Case
Max.
±20
42
240
±30
60
117
300
-40 to + 175
10lb in (1.1N m)
430
210
2.9
V
DS
min
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
E
PULSE
typ.
I
RP
max @ T
C
= 100°C
T
J
max
250
300
30
310
117
175
V
V
m
μJ
A
°C
Key Parameters
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFP4242PBF | PDP MOSFET |
| IRFP440 | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.8A) |
| IRFP450N | Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A) |
| IRFP450 | Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A) |
| IRFP450 | N-CHANNEL POWER MOSFETS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP4232PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFP4232PBF_07 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced process technology |
| IRFP4242PBF | 功能描述:MOSFET PDP SWITCH 300V 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP430 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-247VAR |
| IRFP431 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-247VAR |
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