參數(shù)資料
型號: IRFP4232PBF
廠商: International Rectifier
英文描述: PDP MOSFET
中文描述: MOSFET的等離子
文件頁數(shù): 4/8頁
文件大?。?/td> 293K
代理商: IRFP4232PBF
4
www.irf.com
Fig 11.
Maximum Drain Current vs. Case Temperature
Fig 8.
Typical Source-Drain Diode Forward Voltage
Fig 12.
Maximum Safe Operating Area
Fig 7.
Typical E
PULSE
vs.Temperature
Fig 10.
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
IS
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
0
4
8
12
16
20
VG
VDS= 200V
VDS= 125V
VDS= 50V
ID= 42A
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
0
6
12
18
24
30
36
42
48
54
60
ID
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1μsec
10μsec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
25
50
75
100
125
150
Temperature (°C)
0
200
400
600
800
1000
1200
1400
1600
E
L = 220nH
C= 0.4μF
C= 0.3μF
C= 0.2μF
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