參數(shù)資料
型號： IRFP4232PBF
廠商： International Rectifier
英文描述： PDP MOSFET
中文描述： MOSFET的等離子
文件頁數(shù)： 2/8頁
文件大小： 293K
代理商： IRFP4232PBF
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
I
DSS
Drain-to-Source Leakage Current
Min.
250
Typ.
–––
Max. Units
–––
V
–––
180
–––
mV/°C
m
V
–––
30
35.7
3.0
–––
5.0
–––
-15
–––
mV/°C
–––
–––
5.0
μA
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
g
fs
Q
g
Q
gd
t
st
Forward Transconductance
95
–––
–––
S
Total Gate Charge
–––
160
240
nC
Gate-to-Drain Charge
–––
60
–––
Shoot Through Blocking Time
100
–––
–––
ns
E
PULSE
Energy per Pulse
μJ
C
iss
C
oss
C
rss
C
oss
eff.
L
D
Input Capacitance
–––
7290
–––
Output Capacitance
–––
610
–––
pF
Reverse Transfer Capacitance
–––
240
–––
Effective Output Capacitance
–––
420
–––
Internal Drain Inductance
–––
5.0
–––
Between lead,
nH
6mm (0.25in.)
L
S
Internal Source Inductance
–––
13
–––
from package
and center of die contact
Avalanche Characteristics
Parameter
Units
E
AS
E
AR
V
DS(Avalanche)
I
AS
Single Pulse Avalanche Energy
mJ
Repetitive Avalanche Energy
mJ
Repetitive Avalanche Voltage
V
Avalanche Current
A
Diode Characteristics
Parameter
Min.
–––
Typ.
–––
Max. Units
60
I
S
@ T
C
= 25°C Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
–––
–––
240
–––
–––
1.0
V
–––
240
360
ns
–––
1230
1850
nC
MOSFET symbol
V
DS
= 25V, I
D
= 42A
V
DD
= 125V, I
D
= 42A, V
GS
= 10V
Conditions
V
DD
= 200V, V
GS
= 15V, R
G
= 4.7
L = 220nH, C= 0.4μF, V
GS
= 15V
V
DS
= 200V, R
G
= 4.7
,
T
J
= 25°C
L = 220nH, C= 0.4μF, V
GS
= 15V
V
DS
= 200V, R
G
= 4.7
,
T
J
= 100°C
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig.9
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 0V, V
DS
= 0V to 200V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 42A
T
J
= 25°C, I
F
= 42A, V
DD
= 50V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
Max.
–––
220
43
42
–––
–––
300
–––
–––
310
–––
–––
950
–––
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參數(shù)描述
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