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參數(shù)資料
| 型號： | IRFP250 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強型功率MOS場效應管) |
| 中文描述： | 33 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 55K |
| 代理商： | IRFP250 |
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IRFP250
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP254 | Standard Power MOSFET - N-Channel Enhancement Mode |
| IRFP254 | Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) |
| IRFP264 | N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓250V,導通電阻0.075Ω的N溝道增強型標準功率MOSFET) |
| IRFP340 | 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強型功率MOS場效應管) |
| IRFP360 | N-Channel EnhancementMode MegaMOSFET(最大漏源擊穿電壓400V,導通電阻0.20Ω的N溝道增強型MegaMOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP250_R4941 | 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP250A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFP250B | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFP250B_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP250B_FP001_Q | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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