參數(shù)資料
型號(hào)： IRFP250
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 33 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 55K
代理商： IRFP250
4-325
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
33
A
Pulse Source to Drain Current (Note 3)
-
-
130
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 33A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/
μ
s
-
-
2.0
V
Reverse Recovery Time
140
-
630
ns
Reverse Recovery Charge
1.8
-
8.1
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 1.1mH, R
G
= 50
,
peak I
AS
= 33A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
40
32
24
16
8
1
0.1
10
-3
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
10
-2
IRFP250
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP250_R4941 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250A 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFP250B 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP250B_FP001 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250B_FP001_Q 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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