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參數(shù)資料
| 型號： | IRFP254 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Standard Power MOSFET - N-Channel Enhancement Mode |
| 中文描述： | 23 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | IRFP254 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
250
250
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
23
92
23
A
A
A
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
19
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
M
d
Weight
190
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD
N-Channel Enhancement Mode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
250
V
V
2
4
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
μ
A
250
R
DS(on)
V
= 10 V, I
D
= 14 A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.14
IRFP 254
V
DSS
I
D (cont)
= 23 A
R
DS(on)
= 0.14
= 250 V
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l
International standard package
JEDEC TO-247 AD
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
High commutating dv/dt rating
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controld
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Space savings
l
High power density
92601E(5/96)
D (TAB)
Standard Power MOSFET
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFP254 | Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) |
| IRFP264 | N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓250V,導(dǎo)通電阻0.075Ω的N溝道增強(qiáng)型標(biāo)準(zhǔn)功率MOSFET) |
| IRFP340 | 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| IRFP360 | N-Channel EnhancementMode MegaMOSFET(最大漏源擊穿電壓400V,導(dǎo)通電阻0.20Ω的N溝道增強(qiáng)型MegaMOSFET) |
| IRFP440 | 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET(8.8A, 500V, 0.850 Ω, N溝道功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP254A | 制造商:IRF 制造商全稱:International Rectifier 功能描述: GYDQFHG 3RZHU 026)(7 |
| IRFP254B | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFP254B_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP254BFP001 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFP254N | 功能描述:MOSFET N-Chan 250V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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