- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383118 > IRFP250 (INTERSIL CORP) 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強型功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | IRFP250 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 33 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | IRFP250 |
4-326
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
10
10
2
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
10
1
0.1
I
D
,
SINGLE PULSE
T
J
= MAX RATED
T
= 25
C
BY r
DS(ON)
AREA IS LIMITED
OPERATION IN THIS
10
μ
s
100
μ
s
1ms
10ms
DC
I
D
,
0
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
60
80
10
20
30
40
50
100
V
GS
= 7V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 10V
V
GS
= 6V
0
10
0
1
2
3
5
20
30
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
4
50
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 7V
V
GS
= 10V
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
V
GS
, GATE TO SOURCEVOLTAGE (V)
4
6
8
10
2
10
1
0.1
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
I
D
, DRAIN CURRENT (A)
r
D
,
)
0.5
0.4
0.3
0.2
0.1
00
25
50
75
100
125
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.4
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 17A, V
GS
= 10V
IRFP250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFP254 | Standard Power MOSFET - N-Channel Enhancement Mode |
| IRFP254 | Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) |
| IRFP264 | N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓250V,導(dǎo)通電阻0.075Ω的N溝道增強型標準功率MOSFET) |
| IRFP340 | 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| IRFP360 | N-Channel EnhancementMode MegaMOSFET(最大漏源擊穿電壓400V,導(dǎo)通電阻0.20Ω的N溝道增強型MegaMOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP250_R4941 | 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP250A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFP250B | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFP250B_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP250B_FP001_Q | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。