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參數(shù)資料
| 型號(hào)： | IRFP150N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET |
| 中文描述： | 44 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 148K |
| 代理商： | IRFP150N |
2002 Fairchild Semiconductor Corporation
IRFP150N Rev. B
IRFP150N
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
Packaging
JEDEC TO-247
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.030
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SOURCE
DRAIN
GATE
DRAIN
(TAB)
D
G
S
PART NUMBER
PACKAGE
BRAND
IRFP150N
TO-247
IRFP150N
IRFP150N
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
100
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Drain Current
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
C
= 25
= 100
o
C, V
o
C, V
GS
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
D
DM
44
31
Figure 4
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
o
155
1.03
W
o
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
pkg
300
260
o
o
C
C
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
Data Sheet
January 2002
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