參數(shù)資料
型號: IRF8010S
英文描述: 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package
中文描述: 100V的單N溝道HEXFET功率MOSFET采用D2PAK封裝
文件頁數(shù): 10/10頁
文件大?。?/td> 224K
代理商: IRF8010S
IRF8010S/IRF8010L
10
www.irf.com
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
01/03
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting T
J
= 25°C, L = 0.31mH, R
G
= 25
, I
AS
= 45A.
I
SD
45A, di/dt
110A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300μs; duty cycle
2%.
Rth(jc) (end of life) is the maximum measured value
after 1000 temperature cycles from -55 to 150°C and
is accounted for by the physical wearout of the die attach
medium
in worse case PCB mounting condition of
material (solder/substrate), process and re-flow
temperature.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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