參數(shù)資料
型號(hào)： IRF82
廠商： 意法半導(dǎo)體
英文描述： N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
中文描述： N通道增強(qiáng)型功率MOSTRANSISTORS
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 168K
代理商： IRF82
www.irf.com
1
5/8/00
IRF820AS
IRF820AL
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg Results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective C
OSS
specified (See AN 1001)
Applications
V
DSS
500V
R
DS
(on) max
3.0
I
D
2.5A
Typical SMPS Topologies:
l
Two Transistor Forward
l
Half Bridge and Full Bridge
Parameter
Max.
2.5
1.6
10
50
0.4
± 30
3.4
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 93774A
Notes
through
are on page 8
D
2
Pak
IRF820AS
TO-262
IRF820AL
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關(guān)PDF資料
PDF描述
IRF822 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
IRF822FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
IRF82FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
IRF830ASTRL TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB
IRF830ASTRR TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF820 功能描述:MOSFET N-Chan 500V 2.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF820_R4943 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF820-220 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET
IRF820-220FP 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET
IRF820-251 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*