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參數(shù)資料
| 型號： | IRF7Y1405CM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 18A I(D) | TO-257AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 18A條（?。﹟對257AA |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | IRF7Y1405CM |
www.irf.com
7
IRF7Y1405CM
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 05/02
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25 V, Starting TJ = 25°C, L= 1.9 mH
Peak IAS = 18A, VGS =10V, RG= 25
ISD
≤
18A, di/dt
≤
230 A/
μ
s,
VDD
≤
55V, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
3.05 [.120]
0.13 [.005]
0.71 [.028]
MAX.
B
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
3
2
1
15.88 [.625]
12.70 [.500]
3X
0.64 [.025]
0.50 [.020]
C A
B
2X
2.54 [.100]
C
10.66 [.420]
10.42 [.410]
A
13.63 [.537]
13.39 [.527]
3 3.81 [.150]
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-257AA.
2 = DRAIN
3 = SOURCE
1 = GATE
Case Outline and Dimensions — TO-257AA
PIN ASS IGNMENTS
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