參數(shù)資料
型號: IRF7Y1405CM
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 18A I(D) | TO-257AA
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直| 18A條(?。﹟對257AA
文件頁數(shù): 4/7頁
文件大小: 94K
代理商: IRF7Y1405CM
IRF7Y1405CM
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
60
120
180
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
18A
V
= 11V
DS
V
= 27V
DS
V
= 44V
DS
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
1
0ms
OPERATION IN THIS AREA LIMITED BY RDS(on)
100μs
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-to-Drain Voltage ( V )
0.1
1
10
100
IS
Α
VGS = 0V
TJ = 150°C
TJ = 25°C
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