參數(shù)資料
型號(hào)： IRF7103QPBF
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET
中文描述： ㈢汽車(chē)的HEXFET MOSFET的功率MOSFET
文件頁(yè)數(shù)： 8/10頁(yè)
文件大小： 274K
代理商： IRF7103QPBF
IRF7103QPbF
8
www.irf.com
Fig 19.
Typical Avalanche Current Vs.Pulsewidth
Fig 20.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
0.01
0.1
1
10
100
1000
A
0.05
0.10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
5
10
15
20
25
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 3.0A
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IRF7103TRPBF-CUT TAPE 制造商:IR 功能描述:Dual N-Channel 50 V 2 W 12 nC Hexfet Power Mosfet Surface Mount - SOIC-8
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