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參數(shù)資料
| 型號(hào)： | IRF7103QPBF |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢汽車的HEXFET MOSFET的功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 274K |
| 代理商： | IRF7103QPBF |
HEXFET
Power MOSFET
Specifically designed for Automotive applications, these
HEXFET
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Description
www.irf.com
1
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Lead-Free
Benefits
Typical Applications
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
AUTOMOTIVE MOSFET
IRF7103QPbF
V
DSS
50V
R
DS(on)
max (m
130@V
GS
= 10V
200@V
GS
= 4.5V
I
D
3.0A
1.5A
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
Parameter
Max.
3.0
2.5
25
2.4
16
± 20
22
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
See Fig.16c, 16d, 19, 20
12
-55 to + 175
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7103Q | Power MOSFET(Vdss=50V) |
| IRF7103QTR | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO |
| IRF7103 | Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) |
| IRF7104 | HEXFET Power MOSFET |
| IRF7106 | Power MOSFET(Vdss=+-20V) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7103QTR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO |
| IRF7103QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7103TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 50V 3A 8-Pin SOIC T/R 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 50V 3A 8-Pin SOIC T/R |
| IRF7103TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 50V 3.0A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7103TRPBF-CUT TAPE | 制造商:IR 功能描述:Dual N-Channel 50 V 2 W 12 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
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