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參數(shù)資料
| 型號(hào)： | IRF7103 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 50V的的Rds（on）\u003d 0.130ohm，身份證\u003d 3.0A的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 169K |
| 代理商： | IRF7103 |
IRF7103
Parameter
Min. Typ. Max. Units
50
–––
––– 0.049 –––
–––
0.11 0.13
–––
0.16 0.20
1.0
–––
–––
3.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
1.2
–––
3.5
–––
9.0
–––
8.0
–––
45
–––
25
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
V
GS
= 4.5V, I
D
= 1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 15V, I
D
= 3.0A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 20V
V
GS
= - 20V
I
D
= 2.0A
V
DS
= 25V
V
GS
= 10V
V
DD
= 25V
I
D
= 1.0A
R
G
= 6.0
R
D
= 25
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
3.0
–––
2.0
25
100
-100
30
–––
–––
20
20
70
50
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
290
140
37
–––
–––
–––
pF
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.5A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
70
110
1.2
100
170
V
ns
nC
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
12
–––
–––
2.0
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
–––
6.0
–––
L
D
Internal Drain Inductance
–––
4.0
–––
nH
ns
nA
μA
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤
1.8A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
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