參數(shù)資料
型號(hào): IRF6629PBF
廠(chǎng)商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 263K
代理商: IRF6629PBF
4
www.irf.com
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
2.5V
60μs PULSE WIDTH
Tj = 150°C
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
TD
ID = 29A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
1
2
3
4
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
60μs PULSE WIDTH
0
20
40
60
80 100 120 140 160 180 200
ID, Drain Current (A)
0
2
4
6
8
10
TD
)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
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