參數(shù)資料
型號(hào)： IRF6629PBF
廠商： International Rectifier
英文描述： DirectFET Power MOSFET
中文描述： DirectFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大?。?/td> 263K
代理商： IRF6629PBF
2
www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
17
1.6
2.1
1.8
-6.2
–––
–––
–––
–––
–––
34
7.8
4.2
11
11
15
23
1.3
20
67
20
7.4
4260
1130
550
Max. Units
–––
–––
2.1
2.7
2.35
–––
1.0
150
100
-100
–––
51
–––
–––
–––
–––
–––
–––
3.2
–––
–––
–––
–––
–––
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
nC
See Fig. 15
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max. Units
3.5
I
S
A
I
SM
–––
–––
230
V
SD
t
rr
Q
rr
–––
–––
–––
–––
22
27
1.0
33
41
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Clamped Inductive Load
See Fig. 17
V
GS
= 0V
V
DS
= 13V
V
DS
= 15V, I
D
= 23A
Conditions
= 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
DS
= 13V
V
GS
= 4.5V
I
D
= 23A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 29A
V
GS
= 4.5V, I
D
= 23A
V
DS
= V
GS
, I
D
= 100μA
T
J
= 25°C, I
F
= 23A
di/dt = 220A/μs
I
D
= 23A
V
DD
= 13V, V
GS
= 4.5V
See Fig. 18
T
J
= 25°C, I
S
= 23A, V
GS
= 0V
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