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參數(shù)資料
| 型號： | IRF510A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 252K |
| 代理商： | IRF510A |
IRF510A
BV
DSS
= 100 V
R
DS(on)
= 0.4
I
D
= 5.6 A
100
5.6
4
20
±
20
63
5.6
3.3
6.5
33
0.22
- 55 to +175
300
4.51
--
62.5
--
0.5
--
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175
°
C Operating Temperature
n
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.289
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
℃
)
Continuous Drain Current (T
C
=100
℃
)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
℃
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(1)
(1)
(2)
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
TO-220
1.Gate 2. Drain 3. Source
3
2
1
Rev. B1
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|---|---|
| IRF520A | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為100V，導通電阻為0.2Ω，漏電流為9.2A）) |
| IRF540A | Advanced Power MOSFET |
| IRF614 | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為250V，導通電阻為2.0Ω，漏電流為2.8A）) |
| IRF620A | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為200V，導通電阻為0.8Ω，漏電流為5A）) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF510A_Q | 功能描述:MOSFET 100V .2 Ohm 33W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF510L | 功能描述:MOSFET N-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF510PBF | 功能描述:MOSFET N-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF510PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF510R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.6A I(D) | TO-220AB |
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