參數(shù)資料
型號(hào)： IRF2805
英文描述： 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
中文描述： 55V的單個(gè)N -溝道HEXFET功率MOSFET的在采用TO - 220AB封裝
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 151K
代理商： IRF2805
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
–––
0.06
–––
3.9
2.0
–––
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
–––
38
–––
52
–––
14
–––
120
–––
68
–––
110
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 104A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 104A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 104A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 104A
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
4.7
4.0
–––
20
250
200
-200
230
57
78
–––
–––
–––
–––
V
V/°C
m
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5110 –––
1190 –––
210
6470 –––
860
1600 –––
pF
–––
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.08mH
R
G
= 25
, I
AS
= 104A. (See Figure 12).
I
SD
≤
104A, di/dt
≤
240A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 104A, V
GS
= 0V
T
J
= 25°C, I
F
= 104A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
80
290
1.3
120
430
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
175
700
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF2805L 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRF2805LPBF 功能描述:MOSFET MOSFT 55V 135A 4.7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF2805PBF 功能描述:MOSFET MOSFT 55V 175A 4.7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF2805S 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRF2805SPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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